GFC120 datasheet(1/1 Pages) GSG

部件名	GFC120

功能描述	N Channel Power MOSFET

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制造商	GSG [Gunter Seniconductor GmbH.]

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Gunter Semiconductor GmbH

GFC120

N Channel Power MOSFET

Chip Specification

General Description:

* Advanced Process Technology

* Dynamic dV/dt Rating

* 175℃

℃

℃ Operating Temperature

* Fast Switching

* Fully Avalanche Rated

Mechanical Data:

D7

Dimension

2.1mm x 2.92mm

Thickness:

400

µµµµm

Metallization:

Top :

:

Al

Backside :

CrNiAg / Au

Suggested Bonding Conditions:

Die Mounting:

Solder Perform

95/5 PbSn or 92.5./2.5/5 PbAgIn

Source Bonding Wire:

8 mil Al

Absolute Maximum Rating

@Ta=25℃

℃

Characteristics

Symbol

Limit

Unit

Test Conditions

Drain-to-Source Breakdown Voltage

V(BR)DSS

100

V

VGS=0V, ID=250

µΑ

Static Drain-to - Source On-resistance

RDS(ON)

0.27

Ω

VGS=10V, ID=5.5

Α

Continuous Drain current ( in target package)

ID@25℃

9.2

A

VGS=10V

Continuous Drain current ( in target package)

ID@100℃

6.5

A

VGS=10V

Operation Junction

Tj

-55~175

℃

Storage Temperature

TSTR

-55~175

℃

Target Device: IRF720

TO-220AB

PD

60

W

@Tc=25℃

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