TLC27M2, TLC27M2A, TLC27M2B, TLC27M7

LinCMOS

™ PRECISION DUAL OPERATIONAL AMPLIFIERS

SLOS051C – OCTOBER 1987 – REVISED MAY 1999

2

POST OFFICE BOX 655303

description

The TLC27M2 and TLC27M7 dual operational amplifiers combine a wide range of input offset voltage grades

with low offset voltage drift, high input impedance, low noise, and speeds approaching that of general-purpose

bipolar devices.These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset

voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices

ideal for applications which have previously been reserved for general-purpose bipolar products,but with only

a fraction of the power consumption. Four offset voltage grades are available (C-suffix and I-suffix types),

ranging from the low-cost TLC27M2 (10 mV) to the high-precision TLC27M7 (500

µV). These advantages, in

combination with good common-mode rejection and supply voltage rejection, make these devices a good

choice for new state-of-the-art designs as well as for upgrading existing designs.

In general, many features associated with bipolar technology are available on LinCMOS

™ operational

amplifiers, without the power penalties of bipolar technology. General applications such as transducer

interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the

TLC27M2 and TLC27M7. The devices also exhibit low voltage single-supply operation, making them ideally

suited for remote and inaccessible battery-powered applications. The common-mode input voltage range

includes the negative rail.

A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density

system applications.

The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.

The TLC27M2 and TLC27M7 incorporate internal ESD-protection circuits that prevent functional failures at

voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in

handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

The C-suffix devices are characterized for operation from 0

°C to 70°C. The I-suffix devices are characterized

for operation from – 40

°C to 85°C. The M-suffix devices are characterized for operation over the full military

temperature range of –55

°C to 125°C.