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TLC2202ACD 数据表(PDF) 42 Page - Texas Instruments |
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TLC2202ACD 数据表(HTML) 42 Page - Texas Instruments |
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42 / 62 page ![]() TLC220x, TLC220xA, TLC220xB, TLC220xY Advanced LinCMOS ™ LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS SLOS175 – FEBRUARY 1997 42 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 PARAMETER MEASUREMENT INFORMATION Figure 1. Noise-Voltage Test Circuit 2 k Ω VDD + VDD – /GND VO 20 Ω 20 Ω – + Figure 2. Phase-Margin Test Circuit 10 k Ω VDD + VDD – VO 100 Ω – + VI CL RL (see Note A) NOTE A: CL includes fixture capacitance. Figure 3. Slew-Rate Test Circuit VDD + VDD – VO – + CL RL (see Note A) VI NOTE A: CL includes fixture capacitance. Figure 4. Input-Bias and Offset-Current Test Circuit VDD + VDD – /GND VO – + Ground Shield pA pA typical values Typical values presented in this data sheet represent the median (50% point) of device parametric performance. input bias and offset current At the picoamp bias current level of the TLC220x, TLC220xA, and TLC220xB, accurate measurement of the bias current becomes difficult. Not only does this measurement require a picoammeter, but test socket leakages can easily exceed the actual device bias currents. To measure these small currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters with bias voltages applied but with no device in the socket. The device is then inserted in the socket, and a second test measuring both the socket leakage and the device input bias current is performed. The two measurements are then subtracted algebraically to determine the bias current of the device. noise Texas Instruments offers automated production noise testing to meet individual application requirements. Noise voltage at f = 10 Hz and f = 1 kHz is 100% tested on every TLC2201B device, while lot sample testing is performed on the TLC220xA. For other noise requirements, please contact the factory. |
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