TPIC1502

QUAD AND HEX POWER DMOS ARRAY

SLIS054 – OCTOBER 1996

3

POST OFFICE BOX 655303

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSX

Drain-to-source breakdown voltage

ID = 250 µA,

VGS = 0

20

V

VGS(th)

Gate-to-source threshold voltage

ID = 1 mA,

See Figure 5

VDS = VGS,

1.5

1.85

2.2

V

VGS(th)match Gate-to-source threshold voltage matching

ID = 1 mA,

VDS = VGS

40

mV

V(BR)

Reverse drain-to-GND breakdown voltage

Drain-to-GND current = 250

µA

(D1, D2)

20

V

V(BR)GS

Gate-to-source breakdown voltage, Q2C

IGS = 100 µA

6

V

V(BR)SG

Source-to-gate breakdown voltage, Q2C

IGS = 100 µA

0.7

V

V(DS)on

Drain-to-source on-state voltage

ID = 1.5 A,

VGS = 10 V,

See Notes 3 and 4

0.375

0.45

V

VF

Forward on-state voltage, GND-to-VDD1,

GND-to-VDD2

ID = 1.5 A (D1, D2)

See Notes 3 and 4

1.5

V

VF(SD)

Forward on-state voltage, source-to-drain

IS = 1.5 A,

VGS = 0,

See Notes 3 and 4 and Figure 19

0.93

1.2

V

IDSS

Zero gate voltage drain current

VDS = 16 V,

TC = 25°C

0.05

1

µA

IDSS

Zero-gate-voltage drain current

DS

,

VGS = 0

TC = 125°C

0.5

10

µA

IGSSF

Forward gate current, drain short-circuited

to source

VGS = 16 V,

VDS = 0

10

100

nA

IGSSR

Reverse gate current, drain short-circuited

to source

VSG = 16 V,

VDS = 0

10

100

nA

Ilk

Leakage current, VDD1-to-GND,

VDGND =16V

TC = 25°C

0.05

1

µA

Ilkg

g,

DD1

,

VDD2-to-GND, gate shorted to source

VDGND = 16 V

TC = 125°C

0.5

10

µA

rDS( )

Static drain to source on state resistance

VGS = 10 V,

ID = 1.5 A,

TC = 25°C

0.25

0.3

Ω

rDS(on)

Static drain-to-source on-state resistance

D

,

See Notes 3 and 4

and Figure 9

TC = 125°C

0.38

0.51

Ω

gfs

Forward transconductance

VDS = 14 V,

ID = 750 mA,

See Notes 3 and 4 and Figure 13

0.75

1.2

S

Ciss

Short-circuit input capacitance, common

source

98

Coss

Short-circuit output capacitance, common

source

VDS = 14 V,

f = 1 MHz,

VGS = 0,

See Figure 17

70

pF

Crss

Short-circuit reverse transfer capacitance,

common source

54

αs

Sense-FET drain current ratio

VDS = 6 V,

ID(Q2B) = 1.5 mA

100

150

200

NOTES:

3. Technique should limit TJ – TC to 10°C maximum.

4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

trr

Reverse-recovery time

IS = 750 mA,

VGS = 0,

VDS = 14 V

di/dt = 100 A/

µs

18

ns

QRR

Total diode charge

VDS = 14 V,

di/dt = 100 A/

µs,

See Figures 1 and 23

14

nC