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I2010AF-08ST 数据表(PDF) 4 Page - PulseCore Semiconductor

部件名 I2010AF-08ST
功能描述  Low Frequency EMI Reduction IC
PDF  8 Pages
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制造商  PULSECORE [PulseCore Semiconductor]
网页  http://www.onsemi.com/
标志 PULSECORE - PulseCore Semiconductor

I2010AF-08ST 数据表(HTML) 4 Page - PulseCore Semiconductor

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November 2006
P2010A
rev 0.2
Low Frequency EMI Reduction IC
4 of 8
Notice: The information in this document is subject to change without notice.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
VDD, VIN
Voltage on any pin with respect to Ground
-0.5 to +7
V
TSTG
Storage temperature
-65 to +125
°C
TA
Operating temperature
-40 to+85
°C
Ts
Max. Soldering Temperature (10 sec)
260
°C
TJ
Junction Temperature
150
°C
TDV
Static Discharge Voltage
(As per JEDEC STD22- A114-B)
2
KV
Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect
device reliability.
DC Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
VIL
Input Low Voltage
GND
-
0.8
V
VIH
Input High Voltage
2.0
-
VDD + 0.3
V
IIL
Input Low Current (pull-up resistor on inputs SR0, FS0)
-
-
-35
µA
IIH
Input High Current (pull-down resistor on input SSON)
-
-
35
µA
IXOL
XOUT output low current (at 0.4V, VDD = 3.3V)
-
3
-
mA
IXOH
XOUT output high current (at 2.5V, VDD = 3.3V)
-
3
-
mA
VOL
Output Low Voltage (VDD=3.3V, IOL = 20mA)
-
-
0.4
V
VOH
Output High Voltage (VDD=3.3V, IOH = 20mA)
2.5
-
-
V
IDD
Static Supply Current
-
0.6
-
mA
ICC
Dynamic Supply Current (3.3V and 15pF loading)
4
6
8
mA
VDD
Operating Voltage
2.7
3.3
5.5
V
tON
Power Up Time (First locked clock cycle after power up)
0.18
mS
ZOUT
Clock Output Impedance
50
AC Electrical Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
fIN
Input Frequency
10
20
35
MHz
tLH*
Output rise time
(Measured at 0.8V to 2.0V)
0.7
0.9
1.1
nS
tHL*
Output fall time
(Measured at 2.0V to 0.8V)
0.6
0.8
1.0
nS
tJC
Jitter (Cycle to cycle)
-
-
360
pS
tD
Output duty cycle
45
50
55
%
*tLH and tHL are measured into a capacitive load of 15pF



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