TPS2010, TPS2011, TPS2012, TPS2013

POWER-DISTRIBUTION

SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995

2

POST OFFICE BOX 655303

AVAILABLE OPTIONS

RECOMMENDED MAXIMUM

TYPICAL SHORT-CIRCUIT

PACKAGED DEVICES

CHIP

TJ

CONTINUOUS LOAD CURRENT

(A)

OUTPUT CURRENT LIMIT AT 25

°C

(A)

SOIC

(D)†

TSSOP

(PW)‡

FORM

(Y)

0.2

0.4

TPS2010D

TPS2010PWLE

TPS2010Y

40

°Cto125°C

0.6

1.2

TPS2011D

TPS2011PWLE

TPS2011Y

– 40

°C to 125°C

1

2

TPS2012D

TPS2012PWLE

TPS2012Y

1.5

2.6

TPS2013D

TPS2013PWLE

TPS2013Y

† The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2010DR).

‡ The PW package is only available left-end taped and reeled (indicated by the LE suffix on the device type; e.g., TPS2010PWLE).

functional block diagram

Power Switch

Current

Limit

Driver

Thermal

Sense

Charge

Pump

IN

EN

GND

OUT

CS

†

† Current sense

Terminal Functions

TERMINAL

NAME

NO.

I/O

DESCRIPTION

NAME

D

PW

EN

4

7

I

Enable input. Logic low turns power switch on.

GND

1

1

I

Ground

IN

2, 3

2–6

I

Input voltage

OUT

5–8

8–14

O

Power-switch output

detailed description

power switch

The power switch is an N-channel MOSFET with a maximum on-state resistance of 95 m

configured as a high-side switch.

charge pump

An internal 100-kHz charge pump supplies power to the driver circuit and provides the necessary voltage to pull

the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and

requires very little supply current.