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ZXMP6A17K 数据表(PDF) 4 Page - Diodes Incorporated

部件名 ZXMP6A17K
功能描述  60V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

ZXMP6A17K 数据表(HTML) 4 Page - Diodes Incorporated

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ZXMP6A17K
Document Revision: 2
4 of 8
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMP6A17K
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-60
⎯
⎯
V
ID = -250μA, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-0.5
μA
VDS= -60V, VGS= 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS= ±20V, VDS= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
⎯
⎯
V
ID= -250μA, VDS= VGS
Static Drain-Source On-Resistance (Note 7)
RDS (ON)
⎯
⎯
0.125
Ω
VGS= -10V, ID= -2.3A
0.190
VGS= -4.5V, ID= -1.9A
Forward Transconductance (Notes 7 & 8)
gfs
⎯
4.7
⎯
S
VDS= -15V, ID= -2.2A
Diode Forward Voltage (Note 7)
VSD
⎯
-0.85
-0.95
V
IS= -2A, VGS= 0V
Reverse recovery time (Note 8)
trr
25.1
⎯
ns
IS= -1.7A, di/dt= 100A/μs
Reverse recovery charge (Note 8)
Qrr
⎯
27.2
⎯
nC
DYNAMIC CHARACTERISTICS (
Note 8)
Input Capacitance
Ciss
⎯
637
⎯
pF
VDS= -30V, VGS= 0V
f= 1MHz
Output Capacitance
Coss
⎯
70
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
53
⎯
pF
Total Gate Charge
Qg
⎯
9.0
⎯
nC
VGS= -4.5V
VDS= -30V
ID= -2.2A
Total Gate Charge
Qg
⎯
17.7
⎯
nC
VGS= -10V
Gate-Source Charge
Qgs
⎯
1.6
⎯
nC
Gate-Drain Charge
Qgd
⎯
4.4
⎯
nC
Turn-On Delay Time (Note 9)
tD(on)
⎯
2.6
⎯
ns
VDD= -30V, VGS= -10V
ID= -1A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 9)
tr
⎯
3.4
⎯
ns
Turn-Off Delay Time (Note 9)
tD(off)
⎯
26.2
⎯
ns
Turn-Off Fall Time (Note 9)
tf
⎯
11.3
⎯
ns
Notes:
7. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.



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