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TPS51113 数据表(PDF) 13 Page - Texas Instruments

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部件名 TPS51113
功能描述  SYNCHRONOUS BUCK CONTROLLER WITH HIGH-CURRENT GATE DRIVER
PDF  26 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

TPS51113 数据表(HTML) 13 Page - Texas Instruments

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background image
f
D1
S1
D2
S2
SW 1
IN
SW
I
t
I
t
P
V
6
2
æ
ö
´
´
æ
ö æ
ö
=
´
+
´
ç
÷
ç
÷ ç
÷
è
ø è
ø
è
ø
(11)
D1
O UT
RIP P LE
D 2
O UT
RIP P LE
1
1
I
I
I
and
I
I
I
2
2
=
-
´
=
+
´
(12)
HFET _ Loss
COND1
SW1
P
P
P
=
+
(13)
(
)
(
) (
)
2
2
I
RIPPLE
I
1 - D
I
RMS2
OUT
12
æ
ö
ç
÷
=
´
+
ç
÷
ç
÷
è
ø
(14)
(
)
( )
2
COND2
RMS2
DS ON 2
P
I
R
=
´
(15)
COND3
OUT
F
D
SW
P
I
V
t
=
´
´
´ f
(16)
RR
RR
IN
SW
1
P
Q
V
2
=
´
´
´ f
(17)
SR _ Loss
COND2
COND3
RR
P
P
P
P
=
+
+
(18)
TPS51113, TPS51163
www.ti.com........................................................................................................................................................................................................ SLUS864 – MAY 2009
Also, the switching loss can be approximately described as
where
• I
D1 and ID2 are the current magnitudes at the time instance when the MOSFETs switch
where
• t
s1 is the MOSFET switching-on time
• t
s2 is the MOSFET switching-off time
Therefore, the total power loss of the high-side MOSFET is estimated by the sum of the above power losses,
Synchronous Rectifier MOSFET Power Loss
Power loss associated with the synchronous rectifier (SR) MOSFET mainly consists of RDS(on) conduction loss,
body diode conduction loss and reverse recovery loss.
Similarly to the high-side MOSFET, the conduction loss of the SR MOSFET is also the I2R loss of the MOSFET’s
on-resistance, RDS(on)2. Since the switching on-time of the SR MOSFET is (1-D)
ה
, where T is the duration of one
switching cycle, the RMS current of the SR MOSFET can be calculated as follows.
The symchronous rectifier (SR) MOSFET conduction loss is
The body diode conduction loss is
where
• V
F is the forward voltage of the MOSFET body diode
• t
D is the total conduction time of the body diode in one switching cycle
The body diode recovery time – the time it takes for the body diode to restore its blocking capability from forward
conduction state, determines the reverse recovery losses.
where
• Q
RR is the reverse recovery charge of the body diode
Therefore, the total power loss of the SR MOSFET is estimated by the sum of the above power losses.
Copyright © 2009, Texas Instruments Incorporated
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Product Folder Link(s) :TPS51113 TPS51163



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