STP3N150 datasheet(5/16 Pages) STMICROELECTRONICS

部件名	STP3N150

功能描述	N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH??Power MOSFET

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 16 page

STFV3N150, STFW3N150, STP3N150, STW3N150

Electrical characteristics

5/16

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 750 V, ID = 1.25 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

2.5

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 2.5 A, VGS = 0

1.6

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 2.5 A, di/dt = 100 A/µs

VDD= 60 V

(see Figure 20)

410

2.4

11.7

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 2.5 A, di/dt = 100 A/µs

VDD= 60 V, Tj = 150 °C

(see Figure 20)

540

3.3

12.3

µC

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