T810H datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

T810H

4/10

Doc ID 15714 Rev 1

Figure 3.

On-state rms current versus

ambient temperature (free air

convection, full cycle)

Figure 4.

Relative variation of thermal

impedance, versus pulse duration

0.0

0.5

1.0

1.5

2.0

2.5

3.0

100

125

150

T(RMS)(A)

Ta(°C)

1.E-03

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

K=[Zth/Rth]

Zth(j-a)

Zth(j-c)

tp(s)

Figure 5.

Relative variation of gate trigger

current and voltage versus junction

temperature (typical values)

Figure 6.

Relative variation of holding and

latching current versus junction

temperature (typical values)

GT,VGT[Tj]/ IGT,VGT[Tj=25 °C]

0.0

0.5

1.0

1.5

2.0

2.5

-50

-25

100

125

150

IGT Q1- Q2

VGT Q1- Q2 -Q3

IGT Q3

Tj(°C)

H,IL [Tj]/ IH,IL [Tj=25 °C]

0.0

0.5

1.0

1.5

2.0

-50

-25

100

125

150

Tj(°C)

Figure 7.

Surge peak on-state current

versus number of cycles

Figure 8.

Non-repetitive surge peak on-state

current and corresponding value

of I2t

100

1000

TSM(A)

Non repetitive

j initial=25 °C

One cycle

t=20ms

Repetitive

C=135 °C

Number of cycles

TSM(A), I²t (A²s)

100

1000

0.01

0.10

1.00

10.00

j initial=25 °C

dI/dt limitation: 50 A/µs

TSM

I²t

tP(ms)

Sinusoidal pulse width tp < 10 ms

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