Static Characteristics

Source-DrainDiodeCharacteristics

DynamicCharacteristics

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Starting at T

3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.

4 C

5 C

V

6 R

Microsemireservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.

G

D

S

APT44F80B2_L

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

V

BR(DSS)

Drain-Source Breakdown Voltage

V

800

V

∆V

Breakdown Voltage Temperature Coefficient

Reference to 25°C, I

0.87

V/°C

R

DS(on)

V

0.17

0.21

Ω

V

GS(th)

Gate-Source Threshold Voltage

V

2.5

4

5

V

∆V

Threshold Voltage Temperature Coefficient

-10

mV/°C

I

DSS

Zero Gate Voltage Drain Current

V

V

T

250

µA

T

1000

I

GSS

Gate-Source Leakage Current

V

±100

nA

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

g

fs

Forward Transconductance

V

43

S

C

iss

Input Capacitance

V

f = 1MHz

9330

pF

C

rss

Reverse Transfer Capacitance

160

C

oss

Output Capacitance

930

C

o(cr)

4

Effective Output Capacitance, Charge Related

V

440

C

o(er)

5

Effective Output Capacitance, Energy Related

220

Q

g

Total Gate Charge

V

V

305

nC

Q

gs

Gate-Source Charge

51

Q

gd

Gate-Drain Charge

155

t

d(on)

Turn-On Delay Time

ResistiveSwitching

V

R

6

, V

55

ns

t

r

Current Rise Time

75

t

d(off)

Turn-Off Delay Time

230

t

f

Current Fall Time

70

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

I

S

Continuous Source Current (Body Diode)

47

A

I

SM

173

V

SD

Diode Forward Voltage

I

1.0

V

t

rr

Reverse Recovery Time

T

320

370

nS

T

590

710

Q

rr

Reverse Recovery Charge

T

1.91

μC

T

5.18

I

rrm

Reverse Recovery Current

T

12.1

A

T

18.1

dv/dt

Peak Recovery dv/dt

I

T

25

V/ns

MOSFET symbol

showing the integral

reverse p-n junction

diode (body diode)