IRC Advanced Film Division

General Note

IRC reserves the right to make changes in product specification without notice or liability.

All information is subject to IRC’s own data and is considered accurate at time of going to print.

A subsidiary of

TT electronics plc

• Corpus Christi Texas 78411 USA

© IRC Advanced Film Division

Telephone: 361 992 7900 • Facsimile: 361 992 3377 • Email: afdsales@irctt.com • Website: www.irctt.com

WBC-CR Series Issue April 2006

Wire Bondable

High Range Chip Resistors

WBC-CR Series

IRC’s WBC-CR series now brings higher ohmic range thin film

film system on silicon substrates provides thin film performance on an extremely small footprint. Custom

resistance values, sizes and schematics are available on request from the factory.

Absolute Tolerance

to ±0.1%

Absolute TCR

to ±100ppm/°C

Package Power Rating

(@ 70°C)

250mW

Rated Operating Voltage

(not to exceed

P x R )

100V

Operating Temperature

-55°C to +150°C

Noise

<-30dB

Substrate Material

Oxidized Silicon

(10KÅ SiO

Substrate Thickness

0.010˝ ±0.001

(0.254mm ±0.025)

Bond Pad

Metallization

Aluminum

10KÅ minimum

Gold

15KÅ minimum

Backside

R0202 and

T0303

Silicon

(Gold available)

B0202

Gold

3KÅ minimum

Passivation

Silicon Dioxide or

Silicon Nitride

√

(not to exceed

P x R )

(not to exceed

P x R )

√

Electrical Data

0.020˝ ±0.001

(0.508mm ±0.025)

0.020˝ ±0.001

(0.508mm ±0.025)

0.030˝ ±0.001

(0.762mm ±0.025)

0.004˝ min bond pad size

0.004˝ min bond pad size

Back contact

Top contact

Physical Data

R0202 - Discrete

T0303 - Tapped network ½R + ½R

B0202 - Discrete back contact

Top contact

pad chamfered

R

R

½R

½R

0.004˝ min bond pad size