APT15GT120BR_SR(G)

TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS

All Ratings: T

C

= 25°C unless otherwise specified.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 1mA)

Gate Threshold Voltage

(V

CE

= V

GE

, I

C

= 0.6mA, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 15A, T

j

= 25°C)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 15A, T

j

= 125°C)

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 25°C)

2

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 125°C)

2

Gate-Emitter Leakage Current (V

GE

= ±20V)

Symbol

V

(BR)CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

Units

Volts

µA

nA

Symbol

V

CES

V

GE

I

C1

I

C2

I

CM

SSOA

P

D

T

J

,T

STG

T

L

APT15GT120BR_SR(G)

1200

±30

36

18

45

45A @ 960V

250

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ T

C

= 25°C

Continuous Collector Current @ T

C

= 110°C

Pulsed Collector Current

1

@ T

C

= 150°C

Switching Safe Operating Area @ T

J

= 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

G

C

E

MIN

TYP

MAX

1200

4.5

5.5

6.5

2.5

3.0

3.6

3.8

100

TBD

480

switching speed.

• Low Forward Voltage Drop

• High Freq. Switching to 50KHz

• Low Tail Current

• Ultra Low Leakage Current

• RBSOA and SCSOA Rated

TO

-24

7

G

C

E

G

C

E

(S)

(B)

APT15GT120BR

APT15GT120SR

APT15GT120BR(G)

APT15GT120SR(G)

1200V

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Microsemi Website - http://www.microsemi.com