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SPT9712 数据表(PDF) 2 Page - Cadeka Microcircuits LLC. |
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SPT9712 数据表(HTML) 2 Page - Cadeka Microcircuits LLC. |
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2 / 7 page ![]() 2 2/15/01 SPT9712 ABSOLUTE MAXIMUM RATINGS (Beyond which damage may occur)1 25 °C Note: 1. Operation at any Absolute Maximum Rating is not implied. See Electrical Specifications for proper nominal applied conditions in typical applications. Supply Voltages Negative Supply Voltage (VEE) .............................. –7 V A/D Ground Voltage Differential ........................... 0.5 V Input Voltages Digital Input Voltage (D1–D12, Latch Enable) ............................... 0 V to VEE Control Amp Input Voltage Range ............... 0 V to –4 V Reference Input Voltage Range (VREF) ........ 0 V to VEE Output Currents Internal Reference Output Current .................... 500 µA Control Amplifier Output Current ..................... ±2.5 mA Temperature Operating Temperature .......................... –40 to +85 °C Junction Temperature ...................................... +150 °C Lead, Soldering (10 seconds) ......................... +300 °C Storage ................................................ –65 to +150 °C ELECTRICAL SPECIFICATIONS TA = TMIN – TMAX, VEE = –5.2 V, RSet = 7.5 kΩ, Control Amp In = Ref Out, VOUT = 0 V, unless otherwise specified. TEST TEST SPT9712A SPT9712B PARAMETERS CONDITIONS LEVEL MIN TYP MAX MIN TYP MAX UNITS DC Performance Resolution 12 12 Bits Differential Linearity I ±0.5 ±0.75 ±1.0 ±1.25 LSB Differential Linearity Max at Full Temp. VI ±1.5 ±2.0 LSB Integral Linearity Best Fit I ±0.75 ±1.0 ±1.0 ±1.5 LSB Integral Linearity Max at Full Temp. VI ±1.75 ±2.0 LSB Output Capacitance +25 °C V 10 10 pF Gain Error1 +25 °C I 1.0 5.0 1.0 5.0 % FS Full Temp. VI 8.0 8.0 % FS Gain Error Tempco Full Temp. V 150 150 PPM/°C Zero-Scale Offset Error +25 °C I 0.5 2.5 0.5 2.5 µA Full Temp. VI 5.0 5.0 µA Offset Drift Coefficient Full Temp. V 0.01 0.01 µA/°C Output Compliance Voltage +25 °C IV –1.2 +2.0 –1.2 +2.0 V Equivalent Output Resistance +25 °C IV 0.8 1.0 1.2 0.8 1.0 1.2 k Ω Dynamic Performance Conversion Rate +25 °C IV 100 100 MWPS Settling Time tST2 +25 °C V 13 13 ns Output Propagation Delay tD3 +25 °C V 1 1 ns Glitch Energy4 +25 °C V 15 15 pV-s Full Scale Output Current5 +25 °C V 20.48 20.48 mA Spurious-Free Dynamic Range6 +25 °C 1.23 MHz; 10 MWPS 2 MHz Span V 70 70 dBc 5.055 MHz; 20 MWPS 2 MHz Span V 68 68 dBc 10.1 MHz; 50 MWPS 2 MHz Span V 68 68 dBc 16 MHz; 40 MWPS 10 MHz Span V 68 68 dBc Rise Time / Fall Time RL = 50 Ω V2 2 ns Power Supply Requirements Negative Supply Voltage IV –5.46 –5.2 –4.94 –5.46 –5.2 –4.94 V Negative Supply Current (–5.2 V) +25 °C I 115 140 115 140 mA Full Temp VI 148 148 mA Nominal Power Dissipation V 600 600 mW Power Supply Rejection Ratio ±5% of VEE I 30 100 30 100 µA/V External Ref, +25 °C 1 Gain is measured as a ratio of the full-scale current to ISet. The ratio is nominally 128. 2 Measured as voltage at mid-scale transition to ±0.024%; RL=50 Ω. 3 Measured from the rising edge of Latch Enable to where the output signal has left a 1 LSB error band. 4 Glitch is measured as the largest single transient. 5 Calculated using IFS = 128 x (Control Amp In / RSet) 6 SFDR is defined as the difference in signal energy between the fundamental and worst case spurious frequencies in the output spectrum window, which is centered at the fundamental frequency and covers the indicated span. |
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