BUD44D2

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

VCEO(sus)

400

470

Vdc

Collector–Base Breakdown Voltage

(ICBO = 1 mA)

VCBO

700

920

Vdc

Emitter–Base Breakdown Voltage

(IEBO = 1 mA)

VEBO

12

14.5

Vdc

Collector Cutoff Current

(VCE = Rated VCEO, IB = 0)

@ TC = 25°C

@ TC = 125°C

ICEO

50

500

µAdc

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

@ TC = 25°C

@ TC = 125°C

@ TC = 125°C

ICES

50

500

100

µAdc

Emitter–Cutoff Current

(VEB = 10 Vdc, IC = 0)

IEBO

100

µAdc

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(IC = 0.4 Adc, IB = 40 mAdc)

@ TC = 25°C

@ TC = 125°C

VBE(sat)

0.78

0.65

0.9

0.8

Vdc

(IC = 1 Adc, IB = 0.2 Adc)

@ TC = 25°C

@ TC = 125°C

0.87

0.76

1

0.9

Collector–Emitter Saturation Voltage

(IC = 0.4 Adc, IB = 20 mAdc)

@ TC = 25°C

@ TC = 125°C

VCE(sat)

0.45

0.67

0.65

1

Vdc

(IC = 0.4 Adc, IB = 40 mAdc)

@ TC = 25°C

@ TC = 125°C

0.25

0.27

0.4

0.5

(IC = 1 Adc, IB = 0.2 Adc)

@ TC = 25°C

@ TC = 125°C

0.28

0.35

0.5

0.6

DC Current Gain

(IC = 0.4 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

hFE

20

18

32

26

—

(IC = 1 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

10

7

14

9.5

(IC = 2 Adc, VCE = 5 Vdc)

@ TC = 25°C

8

11

DIODE CHARACTERISTICS

Forward Diode Voltage

(IEC = 0.2 Adc)

@ TC = 25°C

VEC

0.8

1

V

(IEC = 0.2 Adc)

@ TC = 125°C

0.6

(IEC = 0.4 Adc)

@ TC = 25°C

0.9

1.2

(IEC = 1 Adc)

@ TC = 25°C

1.1

1.5

Forward Recovery Time (see Figure 22 bis)

(IF = 0.2 Adc, di/dt = 10 A/µs)

@ TC = 25°C

Tfr

415

ns

(IF = 0.4 Adc, di/dt = 10 A/µs)

@ TC = 25°C

390

(IF = 1 Adc, di/dt = 10 A/µs)

@ TC = 25°C

340