BUT33

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 100 mA, IB = 0)

VCEO(sus)

400

—

—

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)

ICEV

—

—

—

—

0.2

4.0

mAdc

Emitter Cutoff Current

(VEB = 20 V, IC = 0)

IEBO

—

—

350

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

IS/b

See Figure 16

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 17

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 20 A, VCE = 5 V)

(IC = 36 A, VCE = 5 V)

hFE

30

20

—

—

—

—

Collector–Emitter Saturation Voltage

(IC = 20 A, IB = 1 A)

(IC = 36 A, IB = 3.6 A)

(IC = 44 A, IB = 4.4 A)

(IC = 56 A, IB = 11.2 A)

VCE(sat)

—

—

—

—

—

—

—

—

2.0

2.5

3.0

5.0

Vdc

Base–Emitter Saturation Voltage

(IC = 20 A, IB = 1 A)

(IC = 36 A, IB = 3.6 A)

(IC = 44 A, IB = 4.4 A)

VBE(sat)

—

—

—

—

—

—

2.5

2.9

3.3

Vdc

Diode Forward Voltage

(IF = 44 A)

Vf

—

—

4.0

Vdc

SWITCHING CHARACTERISTICS

Inductive Load Clamped (Table 1)

Storage Time

TC = 25_C

IC = 36 A

ts

—

2.0

3.3

µs

Fall Time

IB = 3.6 A

tf

—

0.8

1.6

µs

Storage Time

See Table 1

TC = 100_C

VBE(off) = 5 V

ts

—

2.2

—

µs

Fall Time

See Table 1

TC = 100_C

VBE(off) = 5 V

tf

—

0.8

—

µs

(1) Pulse Test: PW = 300

µs, Duty Cycle x 2%.