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MT5C1001C-25L/IT 数据表(PDF) 4 Page - Austin Semiconductor |
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MT5C1001C-25L/IT 数据表(HTML) 4 Page - Austin Semiconductor |
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4 / 13 page ![]() SRAM SRAM SRAM SRAM SRAM MT5C1001 Limited Availability MT5C1001 Rev. 2.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < T C < 125 oC; V CC = 5V +10%) MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES READ CYCLE READ cycle time tRC 20 25 35 45 ns Address access time tAA 20 25 35 45 ns Chip Enable access time tACE 20 25 35 45 ns Output hold from address change tOH 3333 ns Chip Enable to output in Low-Z tLZCE 3 3 3 3 ns 4, 6, 7 Chip disable to output in High-Z tHZCE 8 101515 ns 4, 6, 7 Chip Enable to power-up time tPU 0000 ns 4 Chip disable to power-down time tPD 20 25 35 45 ns 4 WRITE CYCLE WRITE cycle time tWC 20 25 35 45 ns Chip Enable to end of write tCW 15 16 20 25 ns Address valid to end of write tAW 15 16 20 25 ns Address setup time tAS 0000 ns Address hold from end of write tAH 1111 ns WRITE pulse width tWP 15 16 20 25 ns Data setup time tDS 8 101315 ns Data hold time tDH 0000 ns Write disable to output in Low-Z tLZWE 3333 ns 7 Write Enable to output in High-Z tHZWE 0 9 0 10013013 ns 4, 6, 7 -35 -45 DESCRIPTION -20 SYMBOL -25 |
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