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ADP3635 数据表(PDF) 13 Page - Analog Devices

部件名 ADP3635
功能描述  High Speed, Dual, 4 A MOSFET Driver with Thermal Protection
PDF  16 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP3635 数据表(HTML) 13 Page - Analog Devices

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ADP3623/ADP3624/ADP3625/ADP3633/ADP3634/ADP3635
Rev. A | Page 13 of 16
ADP1043A
3.3V
VDD
PGND
PGND
FLAGIN
VDD
OTW
OTW
ADP3623/ADP3624/ADP3625/
ADP3633/ADP3634/ADP3635
ADP3623/ADP3624/ADP3625/
ADP3633/ADP3634/ADP3635
Figure 23. OTW
The
Signaling Scheme Example
OTW
The overtemperature shutdown turns off the device to protect it
in the event that the die temperature exceeds the absolute maxi-
mum limit in
open-drain configuration allows connection of
multiple devices to the same warning bus in a wire-OR’ed
configuration, as shown in Figure 23.
Table 2.
SUPPLY CAPACITOR SELECTION
For the supply input (VDD) of the ADP362x/ADP363x family, a
local bypass capacitor is recommended to reduce the noise and
to supply some of the peak currents that are drawn.
An improper decoupling can dramatically increase the rise
times, cause excessive resonance on the OUTA and OUTB pins,
and, in some extreme cases, even damage the device, due to
inductive overvoltage on the VDD or OUTA/OUTB pins.
The minimum capacitance required is determined by the size
of the gate capacitances being driven, but as a general rule, a
4.7 µF, low ESR capacitor should be used. Multilayer ceramic
chip (MLCC) capacitors provide the best combination of low
ESR and small size. Use a smaller ceramic capacitor (100 nF)
with a better high frequency characteristic in parallel to the
main capacitor to further reduce noise.
Keep the ceramic capacitor as close as possible to the ADP362x/
ADP363x device, and minimize the length of the traces going
from the capacitor to the power pins of the device.
PCB LAYOUT CONSIDERATIONS
Use the following general guidelines when designing printed
circuit boards (PCBs):
Trace out the high current paths and use short, wide
(>40 mil) traces to make these connections.
Minimize trace inductance between the OUTA and OUTB
outputs and MOSFET gates.
Connect the PGND pin of the ADP362x/ADP363x device
as closely as possible to the source of the MOSFETs.
Place the VDD bypass capacitor as close as possible to the
VDD and PGND pins.
Use vias to other layers, when possible, to maximize
thermal conduction away from the IC.
Figure 24 shows an example of the typical layout based on the
preceding guidelines.
Figure 24. External Component Placement Example
Note that the exposed pad of the package is not directly
connected to any pin of the package, but it is electrically and
thermally connected to the die substrate, which is the ground of
the device.
PARALLEL OPERATION
The two driver channels present in the ADP3623/ADP3633 or
ADP3624/ADP3634 devices can be combined to operate in
parallel to increase drive capability and minimize power
dissipation in the driver.
The connection scheme for the ADP3624/ADP3634 devices is
shown in Figure 25. In this configuration, INA and INB are
connected together, and OUTA and OUTB are connected
together.
Particular attention must be paid to the layout in this case to
optimize load sharing between the two drivers.
INA
VDD
VDD
PGND
ADP3624/ADP3634
OUTA
OUTB
INB
SD
OTW
1
3
8
7
6
5
A
B
2
4
VDS
Figure 25. Parallel Operation



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