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ADP3635 数据表(PDF) 13 Page - Analog Devices |
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ADP3635 数据表(HTML) 13 Page - Analog Devices |
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13 / 16 page ![]() ADP3623/ADP3624/ADP3625/ADP3633/ADP3634/ADP3635 Rev. A | Page 13 of 16 ADP1043A 3.3V VDD PGND PGND FLAGIN VDD OTW OTW ADP3623/ADP3624/ADP3625/ ADP3633/ADP3634/ADP3635 ADP3623/ADP3624/ADP3625/ ADP3633/ADP3634/ADP3635 Figure 23. OTW The Signaling Scheme Example OTW The overtemperature shutdown turns off the device to protect it in the event that the die temperature exceeds the absolute maxi- mum limit in open-drain configuration allows connection of multiple devices to the same warning bus in a wire-OR’ed configuration, as shown in Figure 23. Table 2. SUPPLY CAPACITOR SELECTION For the supply input (VDD) of the ADP362x/ADP363x family, a local bypass capacitor is recommended to reduce the noise and to supply some of the peak currents that are drawn. An improper decoupling can dramatically increase the rise times, cause excessive resonance on the OUTA and OUTB pins, and, in some extreme cases, even damage the device, due to inductive overvoltage on the VDD or OUTA/OUTB pins. The minimum capacitance required is determined by the size of the gate capacitances being driven, but as a general rule, a 4.7 µF, low ESR capacitor should be used. Multilayer ceramic chip (MLCC) capacitors provide the best combination of low ESR and small size. Use a smaller ceramic capacitor (100 nF) with a better high frequency characteristic in parallel to the main capacitor to further reduce noise. Keep the ceramic capacitor as close as possible to the ADP362x/ ADP363x device, and minimize the length of the traces going from the capacitor to the power pins of the device. PCB LAYOUT CONSIDERATIONS Use the following general guidelines when designing printed circuit boards (PCBs): • Trace out the high current paths and use short, wide (>40 mil) traces to make these connections. • Minimize trace inductance between the OUTA and OUTB outputs and MOSFET gates. • Connect the PGND pin of the ADP362x/ADP363x device as closely as possible to the source of the MOSFETs. • Place the VDD bypass capacitor as close as possible to the VDD and PGND pins. • Use vias to other layers, when possible, to maximize thermal conduction away from the IC. Figure 24 shows an example of the typical layout based on the preceding guidelines. Figure 24. External Component Placement Example Note that the exposed pad of the package is not directly connected to any pin of the package, but it is electrically and thermally connected to the die substrate, which is the ground of the device. PARALLEL OPERATION The two driver channels present in the ADP3623/ADP3633 or ADP3624/ADP3634 devices can be combined to operate in parallel to increase drive capability and minimize power dissipation in the driver. The connection scheme for the ADP3624/ADP3634 devices is shown in Figure 25. In this configuration, INA and INB are connected together, and OUTA and OUTB are connected together. Particular attention must be paid to the layout in this case to optimize load sharing between the two drivers. INA VDD VDD PGND ADP3624/ADP3634 OUTA OUTB INB SD OTW 1 3 8 7 6 5 A B 2 4 VDS Figure 25. Parallel Operation |
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