1

SPST Reflective AlGaAs PIN Diode Switch

Rev. V3

MA4AGSW1

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

FEATURES

• -5V for low loss state

•+10mA for Isolation state

technology.

DESCRIPTION

M/A-COM’s MA4AGSW1 is an Aluminum-Gallium-

Arsenide, single pole, single throw (SPST), PIN

diode switch. The switch features enhanced AlGaAs

anodes which are formed using M/A-COM’s pat-

ented hetero-junction technology. This technology

produces a switch with less loss than conventional

GaAs

processes. As much as a 0.3 dB reduc-

tion in insertion loss can be realized at 50GHz.

These devices are

fabricated on an OMCVD epi-

taxial wafer using a

process designed for high de-

vice uniformity and

extremely low parasitics. The

diodes themselves

exhibit low series resistance,

low capacitance, and fast switching speed. They are

fully passivated with silicon nitride and have an addi-

tional polymer layer for scratch protection. The pro-

tective coating prevents damage to the diode junc-

tion and anode air-bridges during

handling and

assembly. Off chip bias circuitry is

required.

APPLICATIONS

The high electron mobility of AlGaAs and the low

capacitance of the PIN diodes makes this switch

ideal for fast switching, high frequency, multi-throw

switch designs. These AlGaAs PIN switches are

used in switching arrays for radar systems, radiome-

ters, test equipment and other multi-assembly com-

ponents.

Yellow areas indicate bond pads

J1

J2

Parameter

Maximum Rating

Operating Temperature

-55°C to +125°C

Storage Temperature

-55°C to +150°C

Incident C.W. RF Power

+23dBm C.W.

Breakdown Voltage

25V

Bias Current

± 25mA

Junction Temperature

+175°C

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.