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MA4AGSW1A 数据表(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MA4AGSW1A 数据表(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
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2 / 7 page ![]() SPST Non-Reflective AlGaAs PIN Diode Switch V4 MA4AGSW1A ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 2 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Electrical Specifications @ TAMB = 25°C (On-wafer measurements) Parameter Ports Bias Conditions Frequency Typical Insertion Loss J1 - J2 Bias J1 — -1.35V/10mA 50GHz 1.2dB Bias B — -1.35V/0mA Isolation J1 - J2 Port J1 — +1.35V/10mA 50GHz 30dB Bias B — +1.35V/10mA Input return Loss J1- J2 (Terminated by 50Ω) Port J1 — -1.35V/10mA 50GHz 15dB Bias B — -1.35V/0mA Output Return Loss (Insertion loss)) J2- J1 (Terminated by 50Ω) Port J1 — -1.35V/10mA 50GHz 18dB Bias B — -1.35V/0mA Output Return Loss (Isolation) J2 Port J1 — +1.35V/10mA 50GHz 18dB Bias B — +1.35V/10mA Switching Speed (10% - 90% RF Voltage) J1 - J2 ±5V PIN TTL Driver 10GHz 10nS 1MHz Repetition Frequency. Notes: 1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 10 ns rise and fall times. 2. Bias nodes, J1 and B may be connected together |
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