GaAs SP4T 2.5 V High Power Switch

DC - 3.0 GHz

Rev. V3

MASWSS0118

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M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

2

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

3

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

4

DC – 1 GHz

1 – 2 GHz

2 - 3 GHz

dB

dB

dB

—

—

—

0.65

0.80

1.00

0.85

1.00

—

Isolation

DC – 1 GHz

1 – 2 GHz

2 - 3 GHz

dB

dB

dB

27

21

—

29.0

23.0

18.5

—

—

—

Return Loss

DC – 3 GHz

dB

—

20

—

IP3

Two Tone +26 dBm, 5 MHz Spacing, > 50 MHz

dBm

—

57

—

P.1dB

dBm

—

38

—

2

dBc

—

-80

-71

3

dBc

—

-68

-65

Trise, Tfall

µS

—

0.2

—

Ton, Toff

µS

—

0.2

—

Transients

mV

—

35

—

Control Current

µA

—

10

50

IP2

Two Tone +26 dBm, 5 MHz Spacing, > 50 MHz

dBm

—

81

—

3. External DC blocking capacitors are required on all RF ports.

4. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 500 MHz, 39 pF for 0.5 - 3 GHz.

V1

V2

V3

V4

ANT-

RF1

ANT-

RF2

ANT-

RF3

ANT-

RF4

1

0

0

0

On

Off

Off

Off

0

1

0

0

Off

On

Off

Off

0

0

1

0

Off

Off

On

Off

0

0

0

1

Off

Off

Off

On

Truth Table

7,8

7. Differential voltage, V (state 1) -V (state 2), must be 2.5 V

minimum.

8. 0 = -5 V to +2.5 V, 1 = -2.5 V to +5 V

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

Parameter

Absolute Maximum

Input Power

(0.5 - 3.0 GHz, 2.5 V Control)

+38 dBm

Voltage

± 8.5 volts

Operating Temperature

-40

Storage Temperature

-65°C to +150°C

Absolute Maximum Ratings

5,6

5. Exceeding any one or combination of these limits may cause

permanent damage to this device.

6. M/A-COM does not recommend sustained operation near

these survivability limits.