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SW-425 数据表(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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SW-425 数据表(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
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2 / 3 page ![]() 3 Watt Cellular T/R and Antenna Changeover Switch DC - 3.0 GHz Rev. V5 SW-425 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Electrical Specifications: TA = +25°C Parameter Test Conditions Units Min Typ Max Insertion Loss DC - 1 GHz 1 - 2 GHz 2 - 3 GHz dB dB dB — — — 0.4 0.55 0.7 0.5 0.65 0.8 Isolation DC - 1 GHz 1 - 2 GHz 2 - 3 GHz dB dB dB 18 13 10 20 15 12 — — — VSWR DC - 3 GHz Ratio — 1.2:1 1.4:1 P1dB (3 V supply) 500 MHz - 3 GHz dBm 32 34 — P1dB (5 V supply) 500 MHz - 3 GHz dBm 34 36 — Input IP2 Two-Tone, 5 MHz spacing, +10 dBm (+13 dBm total) VCTL = 3 V 0.9 GHz dBm 62 70 — Input IP3 Two-Tone, 5 MHz spacing, +10 dBm (+13 dBm total) VCTL = 3 V 0.9 GHz dBm 48 53 — 2nd Harmonics Pin 30 dBm [VCTL] = 3 V Pin 33 dBm [VCTL] = 5 V dBc dBc 65 65 70 75 — — 3rd Harmonics Pin 30 dBm [VCTL] = 3 V Pin 33 dBm [VCTL] = 5 V dBc dBc 45 65 48 75 — — Trise, Tfall 10% to 90% RF, 90% to 10% RF ns — 60 — Gate Leakage Current VCTL = 3 V µA — 10 20 Ton, Toff 50% Control to 90% RF, Control to 10% RF ns — 20 — Transients In-Band mV — 20 — Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. SOT-26 |
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