CM50TL-24NF datasheet(2/5 Pages) MITSUBISHI

2 / 5 page

Feb. 2009

IC = 5.0mA, VCE = 10V

IC = 50A, VGE = 15V

VCE = 10V

VGE = 0V

VCE = VCES, VGE = 0V

±VGE = VGES, VCE = 0V

VCC = 600V, IC = 50A, VGE = 15V

VCC = 600V, IC = 50A

VGE =

±15V

RG = 6.3

Ω, Inductive load

IE = 50A

IE = 50A, VGE = 0V

IGBT part (1/6 module)*1

FWDi part (1/6 module)*1

Case to heat sink, Thermal compound Applied (1/6 module)*2

1200

±20

100

390

–40 ~ +150

–40 ~ +125

2500

2.5 ~ 3.5

350

MITSUBISHI IGBT MODULES

CM50TL-24NF

HIGH POWER SWITCHING USE

°C

Vrms

N • m

0.5

3.0

—

8.5

0.75

0.17

—

100

300

350

100

—

3.8

0.32

0.43

—

µA

µC

K/W

Ω

—

2.1

2.4

—

250

—

0.085

—

6.3

Collector cutoff current

Gate leakage current

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Reverse recovery time

Reverse recovery charge

Emitter-collector voltage

Contact thermal resistance

External gate resistance

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Thermal resistance

ICES

IGES

Cies

Coes

Cres

td(on)

td(off)

trr (Note 1)

Qrr (Note 1)

VEC(Note 1)

Rth(j-c)Q

Rth(j-c)R

Rth(c-f)

Symbol

Parameter

VGE(th)

VCE(sat)

*1 : Case temperature (Tc) measured point is just under the chips.

If you use this value, Rth(f-a) should be measured just under the chips.

*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150

°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Collector-emitter voltage

Gate-emitter voltage

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Weight

G-E Short

C-E Short

DC, TC = 94

°C*1

Pulse

(Note 2)

Pulse

(Note 2)

TC = 25

°C

Terminals to base plate, f = 60Hz, AC 1 minute

Main terminals M5 screw

Mounting M5 screw

Typical value

Symbol

Parameter

Collector current

Emitter current

Torque strength

Conditions

Unit

Ratings

VCES

VGES

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

Tstg

Viso

—

Unit

Typ.

Limits

Min.

Max.

ABSOLUTE MAXIMUM RATINGS (Tj = 25

°C, unless otherwise specified)

ELECTRICAL CHARACTERISTICS (Tj = 25

°C, unless otherwise specified)

Test conditions

Tj = 25

°C

Tj = 125

°C

CM50TL-24NF 数据表(PDF) 2 Page - Mitsubishi Electric Semiconductor

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