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TC14433A-E/OG 数据表(PDF) 4 Page - Microchip Technology |
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TC14433A-E/OG 数据表(HTML) 4 Page - Microchip Technology |
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4 / 24 page ![]() TC14433/A DS21394D-page 4 © 2008 Microchip Technology Inc. TEMPERATURE SPECIFICATIONS Digital Output Voltage (Pins 14 to 23) (Note 3) VOL — 0 0.05 — — 0.05 V VSS = 0V, “0” Level — -5 -4.95 — — -4.95 V VSS = -5V, “0” Level Output Voltage (Pins 14 to 23) (Note 3) VOH 4.95 5 — 4.95 — — V VSS = 0V, “1” Level 4.95 5 — 4.95 — — V VSS = -5V, “1” Level Output Current (Pins 14 to 23) IOH -0.2 -0.36 — -0.14 — — mA VSS = 0V, VOH = 4.6V Source - 0.5 -0.9 — -0.35 — — mA VSS = -5V, VOH = 5V Source Output Current (Pins 14 to 23) IOL 0.51 0.88 — 0.36 — — mA VSS = 0V, VOL = 0.4V Sink 1.3 2.25 — 0.9 — — mA VSS = -5V, VOL = -4.5V Sink Clock Frequency fCLK —66 — — — — kHz RC = 300 kΩ Input Current -DU IDU — ±0.00 001 ±0.3 — — ±1 µA Power Quiescent Current: TC14433A: IQ —— — — — — — VDD to VEE, ISS = 0 — 0.4 2 — — 3.7 mA VDD = 5, VEE = -5 — 1.4 4 — — 7.4 mA VDD = 8, VEE = -8 Quiescent Current: TC14433 —— — — — — — VDD to VEE, ISS = 0 — 0.9 2 — — 3.7 mA VDD = 5, VEE = -5 — 1.8 4 — — 7.4 mA VDD = 8, VEE = -8 Supply Rejection PSRR — 0.5 — — — — mV/V VDD to VEE, ISS = 0, VREF = 2V, VDD = 5, VEE = -5 TC14433/A ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: Unless otherwise specified, VDD = +5V, VEE = -5V, C1 = 0.1 µF, (Mylar), C0 = 0.1 µF, RC = 300 kΩ, R1 = 470 kΩ @ VREF = 2V, R1 = 27 kΩ @ VREF = 200 mV, TA = +25°C. Parameter Symbol Min Typ Max Min Typ Max Units Test Conditions Note 1: Accuracy – The accuracy of the meter at full scale is the accuracy of the setting of the reference voltage. Zero is recalculated during each conversion cycle. The meaningful specification is linearity. In other words, the deviation from correct reading for all inputs other than positive full scale and zero is defined as the linearity specification. 2: The LSD stability for 200 mV scale is defined as the range that the LSD will occupy 95% of the time. 3: Pin numbers refer to 24-pin PDIP. Electrical Characteristics: Unless otherwise indicated, VDD = +5V and VEE = -5V. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Operating Temperature Range TA -40 — +85 °C Note Storage Temperature Range TA -65 — +150 °C Thermal Package Resistances Thermal Resistance, 24LD PDIP θ JA — 60.5 — °C/W Thermal Resistance, 24LD CERDIP θ JA —N/A — °C/W Thermal Resistance,24LD SOIC Wide θ JA —70 — °C/W Thermal Resistance, 28LD PLCC θ JA — 61.2 — °C/W Note: The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C. |
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