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LP3987 数据表(PDF) 7 Page - Lowpower Semiconductor inc

部件名 LP3987
功能描述  300mA,Ultra-LowNoise Ultra-fast CMOS LDO Regrlator
PDF  8 Pages
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制造商  POWER [Lowpower Semiconductor inc]
网页  http://www.lowpowersemi.com
标志 POWER - Lowpower Semiconductor inc

LP3987 数据表(HTML) 7 Page - Lowpower Semiconductor inc

  LP3987 Datasheet HTML 1Page - Lowpower Semiconductor inc LP3987 Datasheet HTML 2Page - Lowpower Semiconductor inc LP3987 Datasheet HTML 3Page - Lowpower Semiconductor inc LP3987 Datasheet HTML 4Page - Lowpower Semiconductor inc LP3987 Datasheet HTML 5Page - Lowpower Semiconductor inc LP3987 Datasheet HTML 6Page - Lowpower Semiconductor inc LP3987 Datasheet HTML 7Page - Lowpower Semiconductor inc LP3987 Datasheet HTML 8Page - Lowpower Semiconductor inc  
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LP3987
LP3987-datasheet
Oct.-2003
7-7
maximum operation junction temperature 125°C. The
power dissipation definition in device is :
PD = (VIN−VOUT) x IOUT + VIN x IQ The maximum
power dissipation depends on the thermal resistance
of IC package, PCB layout, the rate of surroundings
airflow and temperature difference between junction
to ambient. The maximum power dissipation can be
calculated by following formula :
PD(MAX) = ( TJ(MAX) − TA ) /θJA Where TJ(MAX) is
the maximum operation junction temperature 125°C,
TA is the ambient temperature and the θJA is the
junction to ambient thermal resistance.
For
recommended
operating
conditions
specification of LP3987, where TJ(MAX) is the
maximum junction temperature of the die (125°C)
and TA is the maximum ambient temperature. The
junction to ambient thermal resistance (θJA is layout
dependent) for SOT-23-5 package is 250°C/W.
PD(MAX) = (125°C−25°C) / 250 = 400mW (SOT-23-5)
PD(MAX) = (125°C−25°C) / 165 = 606mW
The maximum power dissipation depends on
operating
ambient temperature for fixed TJ(MAX) and thermal
resistance θJA.



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