2SK2173 datasheet(2/6 Pages) TOSHIBA

2 / 6 page

2SK2173

2002- 07- 22

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

µA

Drain cut–off current

IDSS

VDS = 60 V, VGS = 0 V

—

100

µA

Drain–source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

—

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

0.8

—

2.0

VGS = 4 V, ID = 25 A

—

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 25 A

—

mΩ

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 25 A

—

Input capacitance

Ciss

—

3550

—

Reverse transfer capacitance

Crss

—

550

—

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

—

1600

—

Rise time

—

Turn−on time

ton

—

Fall time

—

Switching time

Turn−off time

toff

—

180

—

Total gate charge (Gate−source

plus gate−drain)

—

110

—

Gate−source charge

Qgs

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ 48 V, VGS = 10 V, ID = 50 A

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

Pulse drain reverse current

(Note 1)

IDRP

—

200

Forward voltage (diode)

VDSF

IDR = 50 A, VGS = 0 V

—

−1.7

Reverse recovery time

trr

—

120

—

Reverse recovered charge

Qrr

IDR = 50 A, VGS = 0 V

dIDR / dt = 50 A / µs

—

0.2

—

µC

Marking

※

Type

K2173

※ Lot Number

Month (starting from alphabet A)

Year

(last number of the christian era)

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