MCP4641-104ESLASHMS datasheet(38/92 Pages) MICROCHIP

38 / 92 page

MCP454X/456X/464X/466X

DS22107A-page 38

4.2.1

NON-VOLATILE MEMORY

(EEPROM)

This memory can be grouped into two uses of non-vol-

atile memory. These are:

• General Purpose Registers

• Non-Volatile Wiper Registers

The non-volatile wipers starts functioning below the

devices VPOR/VBOR trip point.

4.2.1.1

General Purpose Registers

These locations allow the user to store up to 10 (9-bit)

locations worth of information.

4.2.1.2

Non-Volatile Wiper Registers

These locations contain the wiper values that are

loaded into the corresponding volatile wiper register

whenever the device has a POR/BOR event. There are

up to two registers, one for each resistor network.

The non-volatile wiper register enables stand-alone

operation of the device (without Microcontroller control)

after being programmed to the desired value.

4.2.1.3

Factory Initialization of Non-Volatile

Memory (EEPROM)

The Non-Volatile Wiper values will be initialized to

mid-scale value. This is shown in Table 4-2.

The General purpose EEPROM memory will be

programmed to a default value of 0xFF.

It is good practice in the manufacturing flow to

configure the device to your desired settings.

TABLE 4-2:

DEFAULT FACTORY

SETTINGS SELECTION

4.2.1.4

Special Features

There are 3 non-volatile bits that are not directly

mapped into the address space. These bits control the

following functions:

• EEPROM Write Protect

• WiperLock Technology for Non-Volatile Wiper 0

• WiperLock Technology for Non-Volatile Wiper 1

The operation of WiperLock Technology is discussed in

Section 5.3. The state of the WL0, WL1, and WP bits

is reflected in the STATUS register (see Register 4-1).

EEPROM Write Protect

All internal EEPROM memory can be Write Protected.

When EEPROM memory is Write Protected, Write

commands to the internal EEPROM are prevented.

Write Protect (WP) can be enabled/disabled by two

methods. These are:

• External WP Hardware pin (MCP46X1 devices

only)

• Non-Volatile configuration bit

High Voltage commands are required to enable and

disable the nonvolatile WP bit. These commands are

shown in Section 7.8 “Modify Write Protect or Wip-

erLock Technology (High Voltage)”.

To write to EEPROM, both the external WP pin and the

internal WP EEPROM bit must be disabled. Write

Protect does not block commands to the volatile

registers.

4.2.2

VOLATILE MEMORY (RAM)

There are four Volatile Memory locations. These are:

• Volatile Wiper 0

• Volatile Wiper 1

(Dual Resistor Network devices only)

• Status Register

• Terminal Control (TCON) Register

The volatile memory starts functioning at the RAM

retention voltage (VRAM).

Wiper

Code

8-bit 7-bit

-502

5.0 k

Mid-scale

80h

40h

Disabled

-103

10.0 k

Ω Mid-scale 80h

40h

Disabled

-503

50.0 k

Ω Mid-scale 80h

40h

Disabled

-104

100.0 k

Ω Mid-scale 80h

40h

Disabled

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