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SSF8521 数据表(PDF) 3 Page - Silikron Semiconductor Co.,LTD. |
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SSF8521 数据表(HTML) 3 Page - Silikron Semiconductor Co.,LTD. |
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3 / 5 page ![]() SSF8521 SCHOTTKY DIODE PARAMETERS Forward Voltage Drop V I ©Silikron Semiconductor CO.,LTD 2008.12.1 Version : 1.1 page 3 of 5 A Good-Ark Company F F=1.0A 0.51 0.575 V Maximum reverse leakage current Irm VR=20V 5 uA NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS VIN VOUT 10% 10% 50% 50% PULSE WIDTH INVERTED td(on) 90% tr ton 90% 10% toff td(off) tf 90% VIN VOUT 10% 10% 50% 50% PULSE WIDTH INVERTED td(on) 90% 90% tr ton 90% 10% toff td(off) tf 90% Figure 2:Switching Waveforms Rgen Vin G Vdd Rl Vout S D Vgs Figure1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedanc |
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