MPXV5004G

Sensors

4

Freescale Semiconductor

Pressure

Maximum Ratings

Figure 1. Integrated Pressure Sensor Schematic

On-chip Temperature Compensation and Calibration

The performance over temperature is achieved by

integrating the shear-stress strain gauge, temperature

compensation, calibration and signal conditioning circuitry

onto a single monolithic chip.

chip carrier (Case 482). A fluorosilicone gel isolates the die

surface and wire bonds from the environment, while allowing

the pressure signal to be transmitted to the silicon diaphragm.

The MPxx5004G series sensor operating characteristics

are based on use of dry air as pressure media. Media, other

than dry air, may have adverse effects on sensor

performance and long-term reliability. Internal reliability and

qualification test for dry air, and other media, are available

from the factory. Contact the factory for information regarding

media tolerance in your application.

interfacing the output of the MPxx5004G to the A/D input of

the microprocessor or microcontroller. Proper decoupling of

the power supply is recommended.

Typical, minimum and maximum output curves are shown

for operation over a temperature range of 10

°C to 60°C using

saturate outside of the specified pressure range.

Figure 2. Cross-Sectional Diagram (Not to Scale)

1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.

Rating

Symbol

Value

Unit

Maximum Pressure (P1 > P2)

16

kPa

Storage Temperature

–30 to +100

°C

Operating Temperature

0 to +85

°C

Sensing

Element

GND

Thin Film

Temperature

Compensation

and Calibration

Circuitry

Gain Stage #2

and

Ground

Reference

Shift Circuitry

Pins 1, 5, 6, 7, and 8 are NO CONNECTS

for small outline package device.

2

4

3

Fluorosilicone

Gel Die Coat

Wire Bond

Die

P1

Stainless

Steel Cap

Thermoplastic

Case

Die Bond

Differential Sensing Element

P2

Lead Frame