TMB166 datasheet(3/12 Pages) SANKEN

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Triac (Bidirectional Triode Thyristor)

TMB16xS

Series

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Off-State Leakage Current

IDRM

VD = VDRM, TJ = 150°C, RGREF =

∞ using test circuit 1

–

2.0

VD = VDRM, TJ = 25°C, RGREF =

∞ using test circuit 1

–

100

μA

On-State Voltage

VTM

IT = 20 A, TJ = 25°C

–

1.45

Gate Trigger Voltage

VGT

Quadrant I: T2+, G+

VD = 12 V, RL = 20 Ω, TJ = 25°C

–

1.5

Quadrant II: T2+, G–

–

1.5

Quadrant III: T2–, G–

–

1.5

Gate Trigger Current

IGT

Quadrant I: T2+, G+

VD = 12 V, RL = 20 Ω, TJ = 25°C

–

Quadrant II: T2+, G–

–

Quadrant III: T2–, G–

–

Gate Non-trigger Voltage

VGD

VD = VDRM × 0.5, RL = 4 kΩ, TJ = 125°C

0.2

–

Critical Rising Rate of

Off-State Voltage during

Commutation*

(dv/dt)c

VD = 400 V, (di/dt)c = –8 A/ms, ITP = 2 A, TJ = 125°C

–

μs

Critical Rising Rate of Off-

State Voltage

dv/dt

VD = VDRM × 0.67, RGREF =

∞, TJ = 125°C

–

μs

*Where ITP is the peak current through T2 to T1.

GREF =

∞

T1 [ – ]

T2 [ + ]

G [ – ]

T1 [ – ]

T2 [ + ]

G [ + ]

T1 [ + ]

T2 [ – ]

G [ – ]

T1 [ + ]

T2 [ – ]

G [ + ]

Quadrant II

Quadrant I

+IGT

+T2

–T2

Polarities referenced to T1

–IGT

Quadrant III

Quadrant IV

Test Circuit 1

Gate Trigger Characteristics

Gate Trigger Current

tgr

tgw

igp

Allegro MicroSystems, Inc.

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

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