MAC8S SERIES

4

Data Sheets

Motorola Thyristor Device Data

400

450

500

550

600

650

700

750

800

80

90

100

110

120

130

Figure 10.0 Typical Exponential Static dv/dt Versus

Peak Voltage, MT2(+)

VPK, Peak Voltage (Volts)

100

105

110

115

120

125

120

130

70

80

90

100

110

Figure 11.0 Typical Exponential Static dv/dt Versus

Junction Temperature, MT2(+)

TJ, Junction Temperature (°C)

400

450

500

550

600

650

700

750

800

100

150

200

250

300

350

Figure 12.0 Typical Exponential Static dv/dt Versus

Peak Voltage, MT2(–)

VPK, Peak Voltage (Volts)

100

105

110

115

120

125

50

100

250

300

350

Figure 13.0 Typical Exponential Static dv/dt Versus

Junction Temperature, MT2(–)

TJ, Junction Temperature (°C)

120

°C

110

°C

TJ = 100°C

RG – MT1 = 510W

100

200

300

400

500

600

700

800

900

1000

60

80

100

120

140

Figure 9.0 Typical Exponential Static dv/dt Versus

Gate–MT1 Resistance, MT2(+)

RGK, GATE–MT1 RESISTANCE (OHMS)

160

180

200

600V

800V

VPK = 400V

TJ = 110°C

120

°C

110

°C

TJ = 100°C

RG – MT1 = 510W

800V

600V

VPK = 400V

RG – MT1 = 510W

200

150

800V

600V

VPK = 400V

RG – MT1 = 510W

100

200

300

400

500

600

100

250

300

Figure 14.0 Typical Exponential Static dv/dt Versus

Gate–MT1 Resistance, MT2(–)

RGK, GATE–MT1 RESISTANCE (OHMS)

200

150

800V

600V

VPK = 400V

TJ = 110°C

700

800

900

1000