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CDBER0230L 数据表(PDF) 1 Page - Comchip Technology |
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CDBER0230L 数据表(HTML) 1 Page - Comchip Technology |
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1 / 4 page ![]() Io = 200 mA VR = 30 Volts CDBER0230L SMD Schottky Barrier Diode (RoHS Device) Page 1 QW-A1099 REV:A SMD Diodes Specialist 0.053(1.35) 0.045(1.15) 0.034(0.85) 0.026(0.65) 0.030(0.75) 0.024(0.60) Dimensions in inches and (millimeter) 0503(1308) 0.022(0.55) Typ. 0.016(0.40) Typ. Comchip Technology CO., LTD. A mA V V 1 200 30 35 IO VR VRRM IFSM 8.3ms single half sine-wave superimposed on rate load(JEDEC method) OC OC +125 +125 -40 TSTG Tj Storage temperature Junction temperature Average forward current Reverse voltage Repetitive peak reverse voltage Forward current,surge peak Parameter Conditions Symbol Min Typ Max Unit uA V 30 0.5 IR VF Reverse current Forward voltage Parameter Conditions Symbol Min Typ Max Unit VR = 10 V IF = 200 mA O Maximum Rating (at TA=25 C unless otherwise noted) O Electrical Characteristics (at TA=25 C unless otherwise noted) Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 0503(1308) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BA Mounting position: Any Weight: 0.002 gram(approx.). |
类似零件编号 - CDBER0230L |
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类似说明 - CDBER0230L |
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