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CPDU3V3UP 数据表(PDF) 1 Page - Comchip Technology

部件名 CPDU3V3UP
功能描述  SMD ESD Protection Diode
PDF  4 Pages
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制造商  COMCHIP [Comchip Technology]
网页  http://www.comchiptech.com
标志 COMCHIP - Comchip Technology

CPDU3V3UP 数据表(HTML) 1 Page - Comchip Technology

  CPDU3V3UP Datasheet HTML 1Page - Comchip Technology CPDU3V3UP Datasheet HTML 2Page - Comchip Technology CPDU3V3UP Datasheet HTML 3Page - Comchip Technology CPDU3V3UP Datasheet HTML 4Page - Comchip Technology  
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SMD ESD Protection Diode
SMD Diodes Specialist
CPDU3V3UP
RoHS Device
Features
IEC61000-4-2 (ESD)
kV(Contact),±20kV(Air).
Working voltage: 3.3V
Low leakage current.
Low operating and clamping voltages.
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Mounting position: Any
Weight: 0.003 gram(approx.).
Circuit Diagram
±15
kV
A
W
±20
5
40
VESD
IPP
PPP
OC
-55 to +125
-55 to +125
Tj
Operating temperature
ESD per IEC 61000-4-2(Air)
Peak pulse current ( tp = 8/20 us)
Peak pulse power ( tp = 8/20 us)
Parameter
Symbol
Value
Unit
O
Maximum Rating (at TA=25 C unless otherwise noted)
ESD per IEC 61000-4-2(Contact)
Storage temperature
TSTG
±15
OC
V
V
3.3
VPT
VRWM
Punch-through voltage
Reverse stand-off voltage
Parameter
Conditions
Symbol Min Typ Max Unit
IPT = 2uA
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Snap-back voltage
ISB = 50mA
VSB
Reverse leakage current
VRWM = 3.3V
V
IR
2.8
Clamping voltage
IPP = 1 A, tp=8/20us
VC
V
0.5
0.05
3.5
5.5
uA
IPP = 5 A, tp=8/20us
VC
V
8.0
IPPR = 1 A, tp=8/20us
VCR
V
2.4
Reverse clamping voltage
Junction capacitance
VR = 0 V, f = 1MHz
Cj
pF
16
12
Page 1
Comchip Technology CO., LTD.
REV:A
QW-A7027
0.071(1.80)
0.063(1.60)
0.014(0.35) Typ.
0.039(1.00)
0.031(0.80)
0.033(0.85)
0.027(0.70)
Dimensions in inches and (millimeter)
0603(1608)
0.012 (0.30) Typ.
0.028(0.70) Typ.


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