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BDT82. 数据表(PDF) 2 Page - Comset Semiconductor |
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BDT82. 数据表(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page ![]() COMSET SEMICONDUCTORS 2/3 PNP BDT82 – BDT84 – BDT86 – BDT88 NPN BDT81 – BDT83 – BDT85 – BDT87 Symbol Ratings Value Unit BDT82 BDT84 BDT86 TJ Junction Temperature BDT88 150 °C BDT82 BDT84 BDT86 TStg Storage Temperature BDT88 -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJa Thermal Resistance, Junction to Ambient 70 K/W RthJmb Thermal Resistance, Junction to Mounting Base 1K/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit -IE=0A , - VCB=60 V BDT82 - -0.2 -IE=0A , - VCB=80 V BDT84 - -0.2 -IE=0A , - VCB=100 V BDT86 - -0.2 -ICB0 Collector Cutoff Current -IE=0A , - VCB=120 V BDT88 - -0.2 mA -VBE=0 , -VCE= 60V BDT82 - -1 -VBE=0 , -VCE= 80V BDT84 - -1 -VBE=0 , -VCE= 100V BDT86 - -1 -ICES Collector Cutoff Current -VBE=0 , -VCE= 120V BDT88 - -1 mA BDT82 BDT84 BDT86 -IEBO Emitter Cutoff Current -VEB=7.0 V, -IC=0 BDT88 -- 0.1 mA BDT82 BDT84 BDT86 -IC=50 m A , -VCE=10 V BDT88 40 - - BDT82 BDT84 BDT86 HFE DC Current Gain (1) -IC=5 A , -VCE=4.0 V BDT88 40 - - - BDT82 BDT84 BDT86 -IC=5 A , -IB=0.5 A BDT88 -- 1 BDT82 BDT84 BDT86 -VCE(SAT) Collector-Emitter saturation Voltage (1) -IC=7 A , -IB=0.7 A BDT88 -- 1.6 V |
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