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COMSET SEMICONDUCTORS

1/2

NPN BU508DF

The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for

the BU508DF).

They are a high voltage, high speed switching and they are intended for use in horizontal deflexion

circuits of colour television receivers.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

700

V

Collector-Emitter Voltage

1500

V

Collector Current

8A

Collector Peak Current

15

A

Base Current

4A

Collector Current saturation

4.5

A

Base Peak Current

6A

Total Power Dissipation

34

Watts

Junction Temperature

150

°C

Storage Temperature

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

Thermal Resistance, Junction to Mounting Base

1.0

K/W

Thermal Resistance, Junction to Hexternal Heatsink

3.7

K/W

Thermal Resistance, Junction to Hexternal Heatsink

2.8

K/W

Thermal Resistance, Junction to Ambient

35

K/W

ISOLATION

Symbol

Ratings

Value

Unit

Isolation Voltage from all terminals to external

heatsink (peak value)

1500

V

Isolation capacitance from collector to external

heatsink

Typ.

21

pF

S

S