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APT75DF170HJ 数据表(PDF) 3 Page - Microsemi Corporation |
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APT75DF170HJ 数据表(HTML) 3 Page - Microsemi Corporation |
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3 / 3 page ![]() APT75DF170HJ www.microsemi.com 3- 3 Typical Performance Curve Energy losses vs Collector Current 0 5 10 15 20 25 30 0 25 50 75 100 125 150 IF (A) VCE = 900V VGE = - 15V TJ = 125°C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Diode Forward Characteristic of diode TJ=25°C TJ=125°C TJ=125°C 0 25 50 75 100 125 150 00.5 11.5 2 2.5 3 VF (V) ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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