LPT2021-R-PF datasheet(2/4 Pages) LIGITEK

2 / 4 page

V(BR)ECO

Emitter-Collector

Breakdown Voltage

On State Collector

Current

Collector Dark

Current

Collector-Emitter

Saturation Voltage

Fall Time

Rise Time

ICEO

Ip(on)

VCE(sat)

VCE=30V

IC=800

μA,RL=1KΩ

VCE=10V

Ee=0mw/c

㎡

VCE=5v

Ee=1mw/c

㎡

λP=940nm

μs

Ic=0.5mA

Ee=20mw/c

㎡

260

℃ for 5 seconds

-50

TO +100

℃

MAXIMUM RATINGS

Collector-Emitter

Breakdown Voltage

PARAMETER

ELECTRICAL CHARACTERISTICS(Ta=25

)

•℃

Lead Soldering Temperature(1.6mm From Body)

Storage Temperature

Operating Temperature

Emitter-Collector Voltage

Collector-Emitter Voltage

Power Dissipation

MAXIMUM RATINGS(Ta=25

)

•℃

Note:1.All dimension are in millimeter tolerance is

±0.25mm unless otherwise noted

2.Specifications are subject to change without notice

V(BR)CEO

SYMBOL

PARAMETER

100

Package Dimension

TEST CONDITION

UNIT

Ic=1mA

Ee=0mw/c

㎡

UNIT

Features

. High illumination sensitivity

. Stable characteristics

. Spectrally and mechanically

matched with IR emitter

Description

The LPT2021-R-PF series are silicon

nitride passivated NPN planar

phototransistors with exceptionally

stable characteristics and high

illumination sensitivity the cases of

LPT2021-R-PF are encapsulated in

transparent plastic T1 3/4 package

individuallt

-50

TO +100

℃

0.4

μs

100

1.EMITTER

2.COLLECTOR

IE=100

μA

Ee=0mw/c

㎡

Max.

Typ.

Min.

LPT2021-R-PF

PART NO.

Page 1/3

3.0

4.2

5.2

1.5

MAX

1.0MIN

2.3TYP

12.5MIN

□0.5

TYP

4.0

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