CHA2090

Ref. : DSCHA20909347 – 13 Dec. 99

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

17-24GHz Low Noise Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2090 is a three-stage self-biased

wide band monolithic low noise amplifier.

The circuit is manufactured with a standard

HEMT process : 0.25µm gate length, via

holes through the substrate, air bridges

and electron beam gate lithography.

It is supplied in chip form.

Main Features

§ Broadband performance 17-24GHz

§ 2.0dB noise figure

§ 23dB gain, ± 1dB gain flatness

§ Low DC power consumption, 55mA

§ Chip size : 2,170 x 1,270x 0.1mm

0

5

10

15

20

25

30

5

7

9 1113151719 2123252729313335

Frequency ( GHz )

0

2

4

6

8

10

12

On wafer typical measurements

Main Characteristics

Tamb = +25°C, Vd=4.5V, Pads B,D,E=GND

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

17

24

GHz

NF

Noise figure

2.0

3.0

dB

GGain

19

23

dB

VSWRin

Input VSWR

2:1

VSWRout

Output VSWR

2:1

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !