CHA2093

20-30GHz Low Noise Amplifier

Ref. : DSCHA20939042

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = +25°C, Vd = +4V Id=45mA

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

20

30

Ghz

G

Gain (1)

13

15

dB

∆G

Gain flatness (1)

± 0.5

± 1.0

dB

NF

Noise figure (1)

2.2

3.0

dB

VSWRin

Input VSWR (1)

3.0:1

VSWRout

Ouput VSWR (1)

3.0:1

IP3

3rd order intercept point

20

dBm

P1dB

Output power at 1dB gain compression

13

dBm

Id

Drain bias current

50

mA

(1) These values are representative of on-wafer measurements that are made without

bonding wires at the RF ports.When the chip is attached with typical 0.15nH input and

output bonding wires , the indicated parameter values should be improved.

Tamb = +25°C

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

4.0

V

Pin

Maximum peak input power overdrive (2)

+15

dBm

Top

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these paramaters may cause permanent damage.

(2) Duration < 1s.