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CHA2093RBF 数据表(PDF) 2 Page - United Monolithic Semiconductors |
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CHA2093RBF 数据表(HTML) 2 Page - United Monolithic Semiconductors |
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2 / 8 page ![]() CHA2093RBF 20-30GHz Low Noise Amplifier Ref. : DSCHA2093RBF2057 -26-Feb.-02- 2/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Schematic Typical Bias Conditions for an ambient Temperature of +25°C Symbol Pin No. Parameter Values Unit Vdd 5 Drain bias voltage 4 V Vg1 & 2 1 & 2 First & second stages gate bias voltage -0.2 V Id 5 Drain current 45 mA All other pins are not used for this device. Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4.0 V Pin Maximum peak input power overdrive (2) +15 dBm Top Operating temperature range (3) -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. (3) Upper temperature limit strongly dependent on motherboard design; ratings given for ideal thermal coupling |
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