CHA2094b

Ref. : DSCHA20949312 – 08-Nov.-99

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

36-40GHz Low Noise High Gain Amplifier

GaAs Monolithic Microwave IC

Description

The CHA2094 is a three-stage monolithic low

noise amplifier. It is designed for a wide range

of applications, from military to commercial

communication systems.

The circuit is manufactured with a HEMT

process : 0.25µm gate length, via holes through

the substrate, air bridges and electron beam

gate lithography.

It is available in chip form.

Main Features

Broadband performances : 36-40GHz

3.0dB Noise Figure

21dB gain

±1.5dB gain flatness

Low DC power consumption, 60mA @ 3.5V

Chip size :

1.72 X 1.08 X 0.10 mm

Vgs1&2

Vgs3

Vds

IN

OUT

Vds

Typical on wafer measurements :

Frequency (GHz)

0

4

8

12

16

20

24

34

35

36

37

38

39

40

41

42

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

36

40

GHz

G

Small signal gain

18

21

dB

P1dB

Output power at 1dB gain compression

5

8

dBm

NF

Noise figure

3.0

4.0

dB

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !