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CHA2098RBF/24 数据表(PDF) 6 Page - United Monolithic Semiconductors |
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CHA2098RBF/24 数据表(HTML) 6 Page - United Monolithic Semiconductors |
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6 / 6 page ![]() CHA2098RBF 20-33GHz High Gain Buffer Amplifier Ref. : DSCHA2098RBF2057 -26-Feb.-02 6/6 Specifications subject to change without notice " Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 The RF ports comprise a DC blocking capacitor on chip level. The DC connections include a first level of DC decoupling capacitors (typically 120pF) in the package. However, all DC bias ports should be additionally connected to ground with 10nF capacitors at board level to prevent the MMIC from oscillations. These parts should be placed close to the SMD leadless package. If the same bias is required at different DC ports, the lines should only be connected behind these block capacitors. Further information on the application of the SMD leadless packages for GaAs monolithic microwave ICs are given in the UMS Application Note AN0005. Ordering Information SMD leadless package form : CHA2098RBF/24 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. |
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