CHA4092

20-30GHz High Power Amplifier

Ref. : DSCHA40928021

2/4

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics for Broadband Operation

Tamb = +25°C, Vd1,2,3 = 3.5Volts

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

20

30

GHz

G

Small signal gain (1) (2)

16

17

dB

∆G

Small signal gain flatness (1) (2)

± 1.5

dB

Is

Reverse isolation (1)

30

dB

P1db

Pulsed Output power at 1dB gain compression (1)

22

dBm

VSWRin

Input VSWR (1)

2.0:1

VSWRout

Output VSWR (1)

2.0:1

Id

Bias current

700

900

mA

(1) These values are representative of on-wafer measurements that are made without bonding

wires at the RF ports. In the case of a jig or a module CW mode operation, the typical

output power may be around 2dB less.

(2) Vd1,2,3 = 2Volts

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

4

V

Id

Drain bias current

1200

mA

Vg

Gate bias voltage

-2 to +0.4

V

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +155

°C

(1)

Operation of this device above anyone of these parameters may cause permanent damage.