BAS40 datasheet(1/2 Pages) TSC

部件名	BAS40

功能描述	200mW, Low VF, SMD Schottky Barrier Diode

PDF	2 Pages

Scroll/Zoom	100%

制造商	TSC [Taiwan Semiconductor Company, Ltd]

网页	http://www.taiwansemi.com

标志

1 / 2 page

BAS40 / -04 / -05 / -06

200mW, Low VF, SMD Schottky Barrier Diode

Small Signal Diode

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Min

Max

Min

Max

Case : Flat lead SOT 23 small outline plastic package

2.80

3.00

0.110

0.118

1.20

1.40

0.047

0.055

0.30

0.50

0.012

0.020

1.80

2.00

0.071

0.079

2.25

2.55

0.089

0.100

0.90

1.20

0.035

0.043

Maximum Ratings

Electrical Characteristics

IR=

10μA

IF=

1mA

IF=

10mA

IF=

40mA

Reverse Leakage Current

VR=

30V

Junction Capacitance

Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)

Notes:2. Valid provided that electrodes are kept at ambient temperature

ns

Dimensions

A

Unit (inch)

0.022 REF

0.550 REF

0.38

0.2

-

Reverse Recovery Time IF=IR=10mA, RL=100Ω, IRR=1mA

Trr

5.0

-

Symbol

pF

VR=1V,

f=1.0MHz

CJ

IR

μA

-

1.00

Reverse Breakdown Voltage

Type Number

mA

Mean Forward Current

IO

mA

200

357

V(BR)

40

-

Units

5

mW

40

200

Max

Min

200

40

-65 to + 125

Symbol

Type Number

Repetitive Peak Forward Current

IFRM

Reverse Voltage

Repetitive Peak Reverse Voltage

VRRM

VR

PD

Junction and Storage Temperature Range

TJ, TSTG

IFSM

Thermal Resistance (Junction to Ambient)

(Note 2)

RθJA

Features

Mechanical Data

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

High temperature soldering guaranteed: 260°C/10s

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

Metal-on-silicon Shcottky Barrier

Weight : 0.008gram (approximately)

G

B

C

Unit (mm)

D

E

F

Forward Voltage

VF

Rating at 25°C ambient temperature unless otherwise specified.

Power Dissipation

-V

Units

-

0.50

Non-Repetitive Peak Forward Surge Current (Note 1)

V

Maximum Ratings and Electrical Characteristics

Value

°C

V

°C/W

0.6

A

BAS40

BAS40-06

BAS40-05

BAS40-04

B

A

C

D

G

F

E

Version : C09

类似零件编号 - BAS40

制造商	部件名	数据表	功能描述
NXP Semiconductors	BAS40	58Kb / 8P	Schottky barrier double diodes 1999 Apr 28
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Siemens Semiconductor G...	BAS40	96Kb / 4P	HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection)
Diodes Incorporated	BAS40	155Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER DIODE DS11006 Rev. 12 - 2
General Semiconductor	BAS40	51Kb / 2P	Schottky Diodes

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