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DB3TGRI 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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DB3TGRI 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() DB3-DB3TG 150mW Bi-directional Trigger Diode Small Signal Diode Hermetically Sealed Glass. All external suface are corrosion resistant and terminals are readily solderable. Min Max Min Max Case :DO-35 Solder Hot Dip Tin (Sn) lead finish 0.45 0.55 0.018 0.022 3.05 5.08 0.120 0.200 25.4 38.1 1.000 1.500 1.53 2.28 0.060 0.090 Package DO-35 Maximum Ratings Electrical Characteristics Break-over Voltage C= 22nF Break-over Voltage Symmetry C= 22nF Break-over Current C= 22nF VR= 0.5V Junction Capacitance VR=0, f=1.0MHz Output Voltage Reverse Recovery Time (Note2) Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IF=0.5A, RL=100Ω HERMETICALLY SEALED GLASS Maxiumn Leakage Current IR 10 Features Unit (mm) Unit (inch) Designed for through-Hole Device Type Mounting. B Dimensions High reliability glass passivation insuring parameter Pb free version and RoHS compliant Repetitive Peak Forward Current Pulse Width= 20μsec stability and protection against junction contamination. Maximum Ratings and Electrical Characteristics Mechanical Data Terminal: Pure tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed A Value 150 C Marking : DB3/DB3TG Weight : 0.1255 gram (approximately) High temperature soldering guaranteed: 260°C/10s DB3TG 400 Thermal Resistance (Junction to Ambient) (Note 1) 2 Power Dissipation Symbol Junction and Storage Temperature Range DB3 -40 to + 125 + / - 3 IBO 1.5 VO μs 100 CJ 22.0 V 5 15 nA nF Trr Type Number Symbol μA D IFRM A Rating at 25°C ambient temperature unless otherwise specified. Units PD V VBO °C/W RθJA °C TJ, TSTG Units V + / - 2 + / -VBO DO-35 Axial Lead 32 32 Ordering Information Part No. Packing DB3/DB3TG RI 5Kpcs / 10" Reel mW Type Number A B C D Version : C09 |
类似零件编号 - DB3TGRI |
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类似说明 - DB3TGRI |
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