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LLDB3 数据表(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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LLDB3 数据表(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page ![]() LLDB3-LLDB3TG 150mW Bi-directional Trigger Diode Small Signal Diode MINI-MELF (LL34) HERMETICALLY SEALED GLASS Hermetically Sealed Glass. All external suface are corrosion resistant and terminals are readily solderable. Min Max Min Max Case :MINI-MELF hermetically sealedglass 3.30 3.70 0.130 0.146 1.40 1.60 0.055 0.063 0.25 0.40 0.010 0.016 1.25 1.40 0.049 0.055 Package MINI-MELF Maximum Ratings Electrical Characteristics Break-over Voltage C= 22nF Break-over Voltage Symmetry C= 22nF Break-over Current C= 22nF VR= 0.5V Junction Capacitance VR=0, f=1.0MHz Output Voltage Reverse Recovery Time (Note2) Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IF=0.5A, RL=100Ω 32 Part No. 2.5Kpcs / 7" Reel V VBO °C/W RθJA °C TJ, TSTG Units V D 32 A Rating at 25°C ambient temperature unless otherwise specified. Units PD mW Type Number Ordering Information Junction and Storage Temperature Range LLDB3TG -40 to + 125 Type Number Symbol μs 100 CJ 22.0 V 5 15 nA nF μA Trr + / -VBO + / - 2 IBO 1.5 VO + / - 3 2 Power Dissipation Symbol LLDB3/LLDB3TG L1 IFRM Features Mechanical Data Terminal: Pure tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed Unit (mm) Designed for through-Hole Device Type Mounting. B Dimensions A C High reliability glass passivation insuring parameter stability and protection against junction contamination. Maximum Ratings and Electrical Characteristics Unit (inch) Value Pb free version and RoHS compliant Polarity : Indicated by cathode band Weight : 29 ± 2.5 mg Packing High temperature soldering guaranteed: 270°C/10s 150 Maxiumn Leakage Current IR 10 Repetitive Peak Forward Current Pulse Width= 20μsec LLDB3 400 Thermal Resistance (Junction to Ambient) (Note 1) C B A D Version : B09 |
类似零件编号 - LLDB3 |
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类似说明 - LLDB3 |
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