TSM4835CSRL datasheet(2/4 Pages) TSC

2 / 4 page

Preliminary

TSM4835

30V P-Channel MOSFET

2/2

Version: Preliminary

Electrical Specifications (Ta = 25oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = -250uA

BVDSS

-30

Gate Threshold Voltage

VDS = VGS, ID = -250µA

VGS(TH)

-1

-3

Gate Body Leakage

VGS = ±25V, VDS = 0V

IGSS

±100

Zero Gate Voltage Drain Current

VDS = -30V, VGS = 0V

IDSS

-1.0

µA

On-State Drain Current

VDS ≤ -5V, VGS = -10V

ID(ON)

-50

VGS = -10V, ID = -9.6A

Drain-Source On-State Resistance

VGS = -4.5V, ID = -7.5A

RDS(ON)

mΩ

Forward Transconductance

VDS = -15V, ID = -9.6A

gfs

Diode Forward Voltage

IS = -2.1A, VGS = 0V

VSD

-0.8

-1.2

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

6.5

Gate-Drain Charge

VDS = -15V, ID = -9.6A,

VGS = -5V

Qgd

12.5

Input Capacitance

Ciss

2089

2347

Output Capacitance

Coss

597

Reverse Transfer Capacitance

VDS = -15V, VGS = 0V,

f = 1.0MHz

Crss

495

624

Switching

Turn-On Delay Time

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

100

Turn-Off Fall Time

VDD = -15V, RL = 15Ω,

ID = -1A, VGEN = -10V,

RG = 6Ω

Notes:

a. pulse test: PW ≤300µS, duty cycle ≤2%

b. For DESIGN AID ONLY, not subject to production testing.

b. Switching time is essentially independent of operating temperature.

TSM4835CSRL 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

TSM4835CSRL 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

Html Pages

1 2 3 4

数据表下载