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H5MS5122DFR 数据表(PDF) 39 Page - Hynix Semiconductor |
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H5MS5122DFR 数据表(HTML) 39 Page - Hynix Semiconductor |
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39 / 62 page ![]() Rev 1.2 / Jul. 2008 39 11 Mobile DDR SDRAM 512Mbit (16M x 32bit) H5MS5122DFR Series / H5MS5132DFR Series Write Burst (min. and max. tDQSS) /CLK CLK W RITE NOP NO P NO P NOP BA, Col b tD QSS min Don't Care 1) DI b = Data In to colum n b 2) 3 subsequent elem ents of Data In are applied in the program m ed order follow ing DI b 3) A non-interrupted burst of 4 is show n 4) A10 is low w ith the W RITE com m and (Auto Precharge is disabled) Com m and Address DQS DQ DQS DQ NO P D M D M tDQSS m ax |
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