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APT50GF60JCU2 数据表(PDF) 2 Page - Microsemi Corporation

部件名 APT50GF60JCU2
功能描述  ISOTOP짰 Boost chopper NPT IGBT SiC chopper diode
PDF  6 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APT50GF60JCU2 数据表(HTML) 2 Page - Microsemi Corporation

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APT50GF60JCU2
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
500
µA
Tj = 25°C
1.7
2.0
2.45
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 50A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 1mA
4
6
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
2200
Coes
Output Capacitance
323
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
200
pF
Qg
Total gate Charge
166
Qge
Gate – Emitter Charge
20
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC = 50A
100
nC
Td(on)
Turn-on Delay Time
40
Tr
Rise Time
9
Td(off)
Turn-off Delay Time
120
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
12
ns
Td(on)
Turn-on Delay Time
42
Tr
Rise Time
10
Td(off)
Turn-off Delay Time
130
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
21
ns
Eon
Turn-on Switching Energy
Tj = 125°C
0.3
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7Ω
Tj = 125°C
1
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 10µs ; Tj = 125°C
225
A
Chopper SiC diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
400
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 175°C
200
2000
µA
IF
DC Forward Current
Tc = 125°C
20
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 20A
Tj = 175°C
2
2.4
V
QC
Total Capacitive Charge
IF = 20A, VR = 300V
di/dt =800A/µs
28
nC
f = 1MHz, VR = 200V
130
C
Total Capacitance
f = 1MHz, VR = 400V
100
pF



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