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APT100DL60S 数据表(PDF) 4 Page - Microsemi Corporation |
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APT100DL60S 数据表(HTML) 4 Page - Microsemi Corporation |
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4 / 4 page ![]() APT100DL60B_S(G) 4 3 1 2 5 5 Zero 1 2 3 4 di F/dt - Rate of Diode Current Change Through Zero Crossing. I F - Forward Conduction Current I RRM - Maximum Reverse Recovery Current. trr - Reverse Recovery Time, measured from zero crossing where diode Qrr - Area Under the Curve Defined by IRRM and trr. current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Figure 9. Diode Test Circuit Figure 10, Diode Reverse Recovery Waveform and Definitions 0.25 IRRM CURRENT TRANSFORMER di F/dt Adjust D.U.T. +18V 0V trr/Qrr Waveform Slope = diM/dt 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 6 Vr TO-247 Package Outline D 3PAK Package Outline 15.85 (.624) 16.05(.632) 18.70 (.736) 19.10 (.752) 1.15 (.045) 1.45 (.057) 5.45 (.215) BSC (2 Plcs.) 4.90 (.193) 5.10 (.201) 1.45 (.057) 1.60 (.063) 2.70 (.106) 2.90 (.114) 0.40 (.016) 0.65 (.026) Dimensions in Millimeters (Inches) Heat Sink (Cathode) and Leads are Plated 2.40 (.094) 2.70 (.106) (Base of Lead) 1.90 (.075) 2.10 (.083) Cathode Anode 0.020 (.001) 0.250 (.010) 1.20 (.047) 1.40 (.055) 12.40 (.488) 12.70 (.500) 13.30 (.524) 13.60(.535) 1.00 (.039) 1.15(.045) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) BSC 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 10.90 (.430) BSC 3.50 (.138) 3.81 (.150) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Dimensions in Millimeters and (Inches) Anode Cathode e1 SAC: Tin, Silver, Copper e1 100% Sn Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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